17.9 C
Innichen
June 29, 2022
Digital Revolution Enterprise Technologies Information Technology

Magnetic tunnel junction technology for the angstrom semiconductor era

A research group at Tohoku University has shown that fast switching down to 3.5 ns in sub-five-nm ultra-small magnetic tunnel junctions (MTJs) can be achieved by engineering relaxation time, which governs fast magnetization dynamics. The established technology allows for the replacement of SRAM and high-speed DRAM with spintronic non-volatile memory—STT-MRAM—even at the future’s Angstrom process nodes.A research group at Tohoku University has shown that fast switching down to 3.5 ns in sub-five-nm ultra-small magnetic tunnel junctions (MTJs) can be achieved by engineering relaxation time, which governs fast magnetization dynamics. The established technology allows for the replacement of SRAM and high-speed DRAM with spintronic non-volatile memory—STT-MRAM—even at the future’s Angstrom process nodes.

Related posts

YouTube TV No Longer Lets You Subscribe Through iTunes But it Still Works on iPhones, iPads, & The Apple TV – Cord Cutters News, LLC

Administrator

Co-founder Steve Wozniak thinks Apple should be broken up – Fox News

Administrator

The Internet Has Decided on a Name for Cyberpunk 2077’s Platinum Trophy – Push Square

Administrator

Leave a Comment

* By using this form you agree with the storage and handling of your data by this website.

This website uses cookies to improve your experience. We'll assume you're ok with this, but you can opt-out if you wish. Accept Privacy & Policy