A research group at Tohoku University has shown that fast switching down to 3.5 ns in sub-five-nm ultra-small magnetic tunnel junctions (MTJs) can be achieved by engineering relaxation time, which governs fast magnetization dynamics. The established technology allows for the replacement of SRAM and high-speed DRAM with spintronic non-volatile memory—STT-MRAM—even at the future’s Angstrom process nodes.A research group at Tohoku University has shown that fast switching down to 3.5 ns in sub-five-nm ultra-small magnetic tunnel junctions (MTJs) can be achieved by engineering relaxation time, which governs fast magnetization dynamics. The established technology allows for the replacement of SRAM and high-speed DRAM with spintronic non-volatile memory—STT-MRAM—even at the future’s Angstrom process nodes.
Magnetic tunnel junction technology for the angstrom semiconductor era
